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Beilstein J. Nanotechnol. 2017, 8, 1919–1931, doi:10.3762/bjnano.8.192
Figure 1: Schematic of an organic ferromagnetic device.
Figure 2: (a) Current–voltage characteristics for a OF device with N = 20 carbon sites. (b) Spin polarization...
Figure 3: Density of states of the OF device at a bias of 0.8 V. Here, the Fermi energy of the electrodes is ...
Figure 4: (a) Spin polarization of the current as a function of the spin coupling strength j for a bias of 0....
Figure 5: Density of states of (a) Co and (b) the OF poly-BIPO. The molecular length is 20 sites. (c) Schemat...
Figure 6: Current–voltage characteristics of a Co/OF/Co junction for the four magnetization configurations C1...
Figure 7: Spin-dependent transmission Tσσ(E) as a function of energy close to the Fermi energy for the four m...
Figure 8: Bias-dependent (a) CC and (b) SC through an asymmetric OF device with N = 20 and EF = 0. The arrows...
Figure 9: Spin-dependent transmission near the Fermi energy for N = 20 and EF = 0 at the bias voltages (a) 0 ...
Figure 10: Bias-dependent (a) CC and (b) SC for N = 32 and EF = 0.3 eV. The arrows in panel (b) indicate the S...
Figure 11: Spin-dependent transmission near the Fermi energy for N = 32 and EF = 0.3 eV at the bias voltages (...
Figure 12: Bias-dependent (a) molecular eigenlevels and (b) electronic localization of the spin-up LUMO and th...